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V40100PG
New Product
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.420 V at IF = 5 A
FEATURES * * * * * * Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
3 2 1
TO-247AD (TO-3P)
PIN 1 PIN 3 PIN 2 CASE
TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs Maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A Tj max. 2 x 20 A 100 V 250 A 0.67 V 150 C
MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified (see Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 s, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range per device per diode SYMBOL VRRM IF(AV) IFSM IRRM dv/dt TJ, TSTG V40100PG 100 40 20 250 1.0 10000 - 40 to + 150 UNIT V A A A V/s C
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER Breakdown voltage TEST CONDITIONS at IR = 1.0 mA at IF = 5 A IF = 10 A IF = 20 A at IF = 5 A IF = 10 A IF = 20 A TJ = 25 C TJ = 25 C VF TJ = 125 C SYMBOL V(BR) TYP. 100 (minimum) 0.490 0.572 0.731 0.42 0.50 0.67 MAX. 0.81 V 0.73 UNIT V
Instantaneous forward voltage (1) per diode
Document Number 88972 18-Aug-06
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V40100PG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER TEST CONDITIONS at VR = 70 V Reverse current at rated VR (1) per diode at VR = 100 V Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C SYMBOL TYP. 8.4 7.4 IR 40.5 18.2 MAX. 300 15 500 35 UNIT A mA A mA
THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER Typical thermal resistance per diode SYMBOL RJC V40100PG 2.0 UNIT C/W
ORDERING INFORMATION
PREFERRED P/N V40100PG-E3/45 UNIT WEIGHT (g) 6.109 PREFERRED PACKAGE CODE 45 BASE QUANTITY 30/Tube DELIVERY MODE Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
50 Resistive or Inductive Load 16 14 D = 0.8 D = 0.5 D = 0.3 D = 0.2 D = 0.1 D = 1.0
Average Forward Current (A)
Average Power Loss (W)
40
12 10 8 6 4 2
30
20
T
10
D = tp/T
tp
0 0 25 50 75 100 125 150 175
0 0 5 10 15 20 25
Case Temperature (C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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Document Number 88972 18-Aug-06
V40100PG
Vishay General Semiconductor
300
10000 TJ = TJ max. 8.3 ms Single Half Sine-Wave TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p
Peak Forward Surge Current (A)
200
150 100
Junction Capacitance (pF)
1 10 100
250
1000
50 0 100 0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current Per Diode
100
Figure 6. Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (C/W)
Instantaneous Forward Current (A)
TJ = 150 C 10 TJ = 125 C
Junction to Case
1 TJ = 25 C 0.1
1
0.01 0 0.2 0.4 0.6 0.8 1.0
0.1 0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
100
Instantaneous Reverse Current (mA)
TJ = 150 C 10 TJ = 125 C 1
0.1
0.01 TJ = 25 C 0.001 10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
Document Number 88972 18-Aug-06
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V40100PG
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 0.078 REF (1.98) 10
30 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5)
10 TYP. BOTH SIDES
1
2
3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.118 (3.0) 0.108 (2.7)
1 REF. BOTH SIDES
0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6)
0.117 (2.97)
0.225 (5.7) 0.205 (5.2)
0.048 (1.22) 0.044 (1.12) PIN 1 PIN 3
0.030 (0.76) 0.020 (0.51) PIN 2 CASE
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Document Number 88972 18-Aug-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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